전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

Preview PDF HTML

UD4P20L-S08-R 데이터시트(PDF) 3 Page - Unisonic Technologies

부품명 UD4P20L-S08-R
상세설명  4A, 20V DUAL P-CHANNEL POWER MOSFET
PDF  4 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UD4P20L-S08-R 데이터시트(HTML) 3 Page - Unisonic Technologies

  UD4P20L-S08-R Datasheet HTML 1Page - Unisonic Technologies UD4P20L-S08-R Datasheet HTML 2Page - Unisonic Technologies UD4P20L-S08-R Datasheet HTML 3Page - Unisonic Technologies UD4P20L-S08-R Datasheet HTML 4Page - Unisonic Technologies  
Zoom Inzoom in Zoom Outzoom out
 3 / 4 page
background image
UD4P20
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 4
www.unisonic.com.tw
QW-R502-345.c
ABSOLUTE MAXIMUM RATINGS (unless otherwise specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (VGS =0V)
VDSS
-20
V
Drain-Gate Voltage (RGS = 20kΩ)
VDGR
-20
V
Gate-Source Voltage
VGSS
±16
V
Continuous Drain Current
(TC =25°C, Single Operation)
ID
-4
A
Pulsed Drain Current (Note 2)
IDM
-16
A
Power Dissipation (TC=25°C)
Dual Operation
PD
1.6
W
Single Operation
2
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by safe operating area.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
Single Operation
θJA
62.5
°C/W
Dual Operation
78
°C/W
Note: When Mounted on 0.5 in
2 pad of 2oz. copper
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID = -250μA, VGS = 0 V
-20
V
Drain-Source Leakage Current
IDSS
VDS =-20 V, VGS =0 V
-1
µA
Gate- Source Leakage Current
IGSS
VGS = ±16 V, VDS=0 V
±100
nA
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = -250μA
-1
-1.6
-2.5
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS =-10 V, ID =-2A
70
80
mΩ
VGS =-4.5 V, ID =-2A
85
100
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS =-25 V, VGS =0 V
f=1MHz
1350
pF
Output Capacitance
COSS
490
pF
Reverse Transfer Capacitance
CRSS
130
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VDD=-15V, ID=-2A ,
VGS=-4.5 V, RG=4.7 Ω
25
ns
Turn-ON Rise Time
tR
35
ns
Turn-OFF Delay Time
tD(OFF)
125
ns
Turn-OFF Fall-Time
tF
35
ns
Total Gate Charge
QG
VDD =-24 V, VGS =-5 V
ID =-4 A
12.5
16
nC
Gate Source Charge
QGS
5
nC
Gate Drain Charge
QGD
3
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note 1)
VSD
ISD =-4 A, VGS =0 V
-1.2
V
Maximum Continuous Drain-Source Diode
Forward Current
ISD
-4
A
Maximum Pulsed Drain-Source Diode
Forward Current (Note 2)
ISDM
-16
A
Reverse Recovery Time
trr
ISD=-4A, VDD=-15V
dI/dt =100A/μs, TJ=150°C
45
ns
Reverse Recovery Charge
QRR
36
nC
Notes: 1. Pulsed: Pulse duration =300μS, duty cycle≤1.5 %.
2. Pulse width limited by safe operating area.



Html Pages

1 2 3 4


데이터시트 다운로드

Go To PDF Page


링크 URL



ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크 투 데이터시트    |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com