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UDN302L-AE3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 UDN302L-AE3-R
상세설명  P-CHANNEL 2.5V SPECIFIED POWERTRENCH MOSFET
PDF  4 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UDN302L-AE3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

  UDN302L-AE3-R Datasheet HTML 1Page - Unisonic Technologies UDN302L-AE3-R Datasheet HTML 2Page - Unisonic Technologies UDN302L-AE3-R Datasheet HTML 3Page - Unisonic Technologies UDN302L-AE3-R Datasheet HTML 4Page - Unisonic Technologies  
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UDN302
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R502-278.B
ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±12
V
Continuous Drain Current
ID
-2.4
A
Pulsed Drain Current
IDM
-10
A
Maximum Power Dissipation
PD
0.5
W
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note:Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction-to-Ambient
θJA
250
℃
/W
Junction-to-Case
θJC
75
℃
/W
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=-250µA
-20
V
Breakdown Voltage Temperature
Coefficient
ΔBVDSS/ΔTJ
ID=-250µA,
Referenced to 25°C
-12
mV/°C
Drain-Source Leakage Current
IDSS
VDS=-16V, VGS=0V
-1
µA
Gate-Source Leakage Current
IGSS
VGS=±12V, VDS=0V
±100
nA
ON CHARACTERISTICS
(Note)
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID =-250µA
-0.6
-1.0
-1.5
V
Gate Threshold Voltage Temperature
Coefficient
ΔVGS(TH)/ΔTJ
ID=-250 µA,
Referenced to 25°C
3
mV/°C
VGS=-4.5V, ID=-2.4A
44
55
Static Drain-Source On-Resistance
RDS(ON)
VGS=-2.5V, ID=-2A
64
80
mΩ
On-State Drain Current
ID(ON)
VGS=-4.5V, VDS=-5V
-10
A
Forward Transconductance
gFS
VDS=-5V, ID=-2.4A
10
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
882
pF
Output Capacitance
COSS
211
pF
Reverse Transfer Capacitance
CRSS
VDS=-10V, VGS=0V, f=1.0MHz
112
pF
SWITCHING PARAMETERS
(Note)
Total Gate Charge
QG
9
14
nC
Gate Source Charge
QGS
2
nC
Gate Drain Charge
QGD
VDS=-10V, ID=-2.4A,
VGS=-4.5V
3
nC
Turn-ON Delay Time
tD(ON)
13
23
ns
Turn-ON Rise Time
tR
11
20
ns
Turn-OFF Delay Time
tD(OFF)
25
40
ns
Turn-OFF Fall-Time
tF
VDD=-10V, ID=-1A, VGS=-4.5V
RG=6Ω
15
27
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
VGS=0V, IS=-0.42A (Note)
-0.7
-1.2
V
Maximum Body-Diode Continuous Current
IS
-0.42
A
Note: Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%



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