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UF640L-TN3-R 데이터시트(PDF) 1 Page - Unisonic Technologies |
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UF640L-TN3-R 데이터시트(HTML) 1 Page - Unisonic Technologies |
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1 / 5 page ![]() UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET www.unisonic.com.tw 1 of 5 Copyright © 2011 Unisonic Technologies Co., Ltd QW-R502-066.E 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640 suitable for resonant and PWM converter topologies. FEATURES * RDS(ON) =0.18Ω@VGS = 10V. * Ultra Low gate charge (typical 43nC) * Low reverse transfer capacitance (CRSS = typical 100 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL 1.Gate 3.Source 2.Drain TO-220 TO-263 TO-220F TO-252 1 1 1 1 1 TO-220F2 ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen-Free 1 2 3 UF640L-TA3-T UF640G-TA3-T TO-220 G D S Tube UF640L-TF2-T UF640G-TF2-T TO-220F2 G D S Tube UF640L-TF3-T UF640G-TF3-T TO-220F G D S Tube UF640L-TN3-R UF640G-TN3-R TO-252 G D S Tape Reel UF640L-TN3-T UF640G-TN3-T TO-252 G D S Tube UF640L-TQ2-R UF640G-TQ2-R TO-263 G D S Tape Reel UF640L-TQ2-T UF640G-TQ2-T TO-263 G D S Tube |
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