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UF730L-TN3-R 데이터시트(PDF) 3 Page - Unisonic Technologies |
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UF730L-TN3-R 데이터시트(HTML) 3 Page - Unisonic Technologies |
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3 / 6 page ![]() UF730 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-077.E ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, ISD = 5.5A, 1.6 V Maximum Continuous Drain-Source Diode Forward Current IS 5.5 A Maximum Pulsed Drain-Source Diode Forward Current ISM 22 A Reverse Recovery Time tRR 140 300 660 ns Reverse Recovery Charge QRR ISD = 5.5A, dISD/dt = 100A/μs (Note 3) 0.93 2.1 4.3 μC Notes: 1. Repetitive Rating : Pulse width limited by TJ 2. L = 20mH, IAS = 5.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 4. Essentially independent of operating temperature |
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