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UF3710L-TQ2-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 UF3710L-TQ2-R
상세설명  57A, 100V N-CHANNEL POWER MOSFET
PDF  6 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
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UF3710L-TQ2-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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UF3710
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
QW-R203-036.E
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Gate-Source Voltage
VGSS
±20
V
Drain-Source Voltage
VDSS
100
V
Drain Current
Continuous (VGS=10V)
ID
57
A
Pulsed (Note 2)
IDM
230
Avalanche Current (Note 2)
IAR
57
A
Avalanche Energy
Repetitive(Note 2)
EAR
20
mJ
Single Pulsed(Note 3)
EAS
1060 (Note 4)
Power Dissipation
PD
165
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note:1.
2.
3.
4.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Pulse width limited by TJ(MAX)
TJ=25°C, L=0.65mH, RG=25Ω, IAS=57A, VGS=10V
This is a typical value at device destruction and represents operation outside rated limits.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
62
/W
℃
Junction to Case
θJC
0.75
/W
℃
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250μA
100
V
Drain-Source Leakage Current
IDSS
VDS=100V, VGS=0V
25
μA
Gate-Source Leakage Current
IGSS
VGS=±20V, VDS=0V
±100
nA
Breakdown Voltage Temperature Coefficient
BV
△
DSS/△TJ ID=1mμA,Referenced to 25℃
0.13
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250μA
2.0
4.0
V
Static Drain-Source On-Resistance
RDS(ON)
VGS=10V, ID=28A (Note)
23
mΩ
Forward Transconductance
gFS
VDS=25V, ID=28 A
32
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, VGS=0V, f =1MHz
3130
pF
Output Capacitance
COSS
410
pF
Reverse Transfer Capacitance
CRSS
72
pF



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