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UF3710G-TQ2-R 데이터시트(PDF) 3 Page - Unisonic Technologies |
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UF3710G-TQ2-R 데이터시트(HTML) 3 Page - Unisonic Technologies |
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3 / 6 page ![]() UF3710 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R203-036.E ELECTRICAL CHARACTERISTICS(Cont.) SWITCHING PARAMETERS Total Gate Charge QG VDS=80V, ID=28A, VGS=10V 130 nC Gate Source Charge QGS 26 nC Gate Drain Charge QGD 43 nC Turn-ON Delay Time tD(ON) VDD=50V, ID=28A, RG=2.5Ω VGS=10V (Note) 12 ns Turn-ON Rise Time tR 58 ns Turn-OFF Delay Time tD(OFF) 45 ns Turn-OFF Fall-Time tF 47 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=28A, VGS=0V (Note) 1.2 V Maximum Continuous Drain-Source Diode Forward Current IS MOSFET symbol showing the integral reverse P-N junction diode. 57 A Maximum Pulsed Drain-Source Diode Forward Current ISM 230 A Body Diode Reverse Recovery Time trr IF=28A, dI/dt=100A/μs (Note) 140 220 ns Body Diode Reverse Recovery Charge QRR 670 1010 nC Note: Pulse width ≤ 400μs; duty cycle ≤ 2%. |
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