UK3019

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-311.b

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Continuous

100

mA

Drain Current

Pulsed (Note 2)

400

mA

Power Dissipation (Note 3)

200

mW

Junction Temperature

+150

°С

Storage Temperature

-55 ~ +150

°С

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pw≤10µs, Duty cycle≤50%

3. With each pin mounted on the recommended lands.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

625

°С/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

30

V

Drain-Source Leakage Current

1.0

µA

Gate-Source Leakage Current

±1

µA

ON CHARACTERISTICS

Gate Threshold Voltage

0.8

1.5

V

5

8

Ω

Static drain-source on-state resistance

7

13

Ω

DYNAMIC PARAMETERS

Input Capacitance

13

pF

Output Capacitance

9

pF

Reverse Transfer Capacitance

4

pF

SWITCHING PARAMETERS

Turn-ON Delay Time

15

ns

Turn-ON Rise Time

35

ns

Turn-OFF Delay Time

80

ns

Turn-OFF Fall-Time

80

ns