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UMBF170G-AE2-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 UMBF170G-AE2-R
상세설명  N-CHANNEL ENHANCEMENT MODE
PDF  2 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UMBF170G-AE2-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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UMBF170
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 2
www.unisonic.com.tw
QW-R502-291.b
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60
V
Drain-Gate Voltage (RG=25kΩ)
VDGS
60
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (VGS=10V)
ID
300
mA
Peak Drain Current (tP≦10µs)
IDM
1.2
A
Power Dissipation
PD
0.83
W
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-65 ~ +150
℃
Note:Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction-to-Ambient
θJA
350
K/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0 V, ID=10µA
60
75
V
VDS=48V, VGS=0V
0.01 1.0
µA
Drain-Source Leakage Current
IDSS
VDS=25V, VGS=0V
5
500
nA
Gate-Source Leakage Current
IGSS
VGS= ±15V, VDS=0V
10
100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=1mA
1
2
V
VGS=10V, ID=300mA
2.8
5
Static Drain-Source On-Resistance
RDS(ON)
VGS=4.5V, ID=75mA
3.8
5.3
Ω
Forward Transconductance
gFS
VDS=10V, ID=200mA
100 300
mS
DYNAMIC PARAMETERS
Input Capacitance
CISS
25
40
pF
Output Capacitance
COSS
18
30
pF
Reverse Transfer Capacitance
CRSS
VDS=10 V, VGS=0 V, f=1MHz
7.5
10
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
3
10
ns
Turn-OFF Delay Time
tD(OFF)
VDD=50V, VGS=10V, RGS=50Ω
RG=50Ω, RD=250Ω
12
15
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS =300mA, VGS=0V
0.85 1.5
V
Maximum Body-Diode Continuous Current
IS
300
mA
Peak Source (Diode Forward) Current
ISM
pulsed; tP≦10µs
1.2
A
Body Diode Reverse Recovery Time
tRR
30
ns
Body Diode Reverse Recovery Charge
QRR
IS=300mA, dI/dt=-100A/μs,
VGS=0V, VDS=25V
30
nC
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.



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