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UN1518L-AE3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 UN1518L-AE3-R
상세설명  POWER (SWITCHING) TRANSISTOR
PDF  3 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
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UN1518L-AE3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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UN1518
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R206-088.C
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C, unless otherwise stated)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
20
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
5
V
Pulse (Note 2)
ICM
6
A
Collector Current
DC
IC
2.5
A
Base Current
IB
500
mA
Total Device Dissipation
PD
625
mW
Storage Temperature
TSTG
-50 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width=300ms. Duty cycle ≤2%
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
Collector-Base Breakdown Voltage
BVCBO IC=100µA
20
100
V
Collector-Emitter Breakdown Voltage
BVCEO IC=10mA (Note)
20
27
V
Emitter-Base Breakdown Voltage
BVEBO IE=100µA
5
8.3
V
Collector Cut-Off Current
ICBO
VCB=16V
100
nA
Emitter Cut-Off Current
IEBO
VEB=4V
100
nA
Collector Emitter Cut-Off Current
ICES
VCES=16V
100
nA
IC=0.1A, IB=10mA
10
15
mV
IC=1A, IB=10mA
70
150
Collector-Emitter Saturation Voltage (Note) VCE(SAT)
IC=2.5A, IB=50mA
130
200
Base-Emitter Saturation Voltage (Note)
VBE(SAT) IC=2.5A, IB=50mA
0.89
1.0
V
Base-Emitter Turn-On Voltage (Note)
VBE(ON) VCE=2V, IC=2.5A
0.79
1.0
V
VCE=2V, IC=10mA
200
400
VCE=2V, IC=200mA
300
450
VCE=2V, IC=2A
200
360
DC Current Gain (Note)
hFE
VCE=2V, IC=6A
100
180
Transition Frequency
fT
VCE=10V, IC=50mA, f=100MHz
100
140
MHz
Output Capacitance
COB
VCB=10V, f=1MHz
23
30
pF
Turn-On Time
t(ON)
170
nS
Turn-Off Time
t(OFF)
VCC=10V, IC=1A IB1=-IB2=10mA
400
nS
Note: Pulse width=300ms. Duty cycle ≤2%



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