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UP1496G-AE3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 UP1496G-AE3-R
상세설명  PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
PDF  3 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
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UP1496G-AE3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

  UP1496G-AE3-R Datasheet HTML 1Page - Unisonic Technologies UP1496G-AE3-R Datasheet HTML 2Page - Unisonic Technologies UP1496G-AE3-R Datasheet HTML 3Page - Unisonic Technologies  
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UP1496
Preliminary
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R206-095.b
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-220
V
Collector-Emitter Voltage
VCEO
-200
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-0.3
A
Peak Pulse Current
ICM
-1
A
Base Current
IB
-200
mA
Collector Dissipation (Ta=25°С)
PC
500
mW
Junction Temperature
TJ
+150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
BVCBO
IC=-100 µA
-220
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=-10 mA (Note)
-200
V
Emitter-Base Breakdown Voltage
BVEBO
IE =-100 µA
-5
V
Collector Cutoff Current
ICBO
VCB=-200 V
-100
nA
Emitter Cutoff Current
IEBO
VEB=-4 V
-100
nA
Collector -Emitter Cut-off Current
ICES
VCES=-200 V
-100
nA
VCE=-10V , IC=-1mA
100
VCE=-10V , IC=-100mA (Note)
100
VCE=-10V , IC=-250mA (Note)
85
300
DC Current Transfer Ratio
hFE
VCE=-10V , IC=-400mA (Note)
35
Base-Emitter Turn-On Voltage
VBE(ON)
VCE=-10V , IC =-250 mA (Note)
-0.9
V
IC=-100mA, IB=-10mA
-0.2
V
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=-250mA, IB=-25mA (Note)
-0.35
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC=-250mA, IB=-25mA (Note)
-1.0
V
Transition Frequency
fT
VCE =-10V , IC=-50mA, f=100MHz
150
MHz
Output Capacitance
COB
VCB=-10V, f=1MHz
10
pF
Note: Measured under pulse conditions. Pulse width=300µs. Duty cycle≤2%.



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