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UP2518G-AE3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 UP2518G-AE3-R
상세설명  LOW VCE(SAT) PNP SILICON POWER TRANSISTORS
PDF  3 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UP2518G-AE3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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UP2518
Preliminary
PNP TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R206-083.Bb
ABSOLUTE MAXIMUM RATING (Ta= 25°C, unless otherwise stated)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-20
V
Collector-Emitter Voltage
VCEO
-20
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current (Note 2)
IPEAK
-6
A
Continuous Collector Current
IC
-1.5
A
Base Current
IB
-500
mA
Power Dissipation (Note 3)
Ta =25°C
PD
625
mW
Junction Temperature
TJ
+150
°С
Storage Temperature
TSTG
-55~+150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width=300µs. Duty cycle≤2%
3. Assume the device is mounted and measured on a ceramic substrate15x15x0.6mm
ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise stated)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Collector-Base Breakdown Voltage
BVCBO IC= -100µA
-20
-65
V
Collector-Emitter Breakdown Voltage
BVCEO IC= -10mA (Note)
-20
-55
V
Emitter-Base Breakdown Voltage
BVEBO IE= -100µA
-5
-8.8
V
Collector Cut-Off Current
ICBO
VCB= -15V
-100
nA
Emitter Cut-Off Current
IEBO
VEB= -4V
-100
nA
Collector Emitter Cut-Off Current
ICES
VCES= -15V
-100
nA
IC= -100mA, IB= -10mA (Note)
-16
-40
mV
IC= -1A, IB= -20mA (Note)
-130
-200
mV
Collector-Emitter Saturation Voltage
VCE(SAT)
IC= -1.5A, IB= -50mA (Note)
-145
-220
mV
Base-Emitter Saturation Voltage
VBE(SAT) IC= -1.5A, IB= -50mA (Note)
-0.87
-1.0
V
Base-Emitter Turn-On Voltage
VBE(ON) VCE= -2V, IC= -2A (Note)
-0.81
-1.0
V
VCE= -2V, IC= -10mA (Note)
300
475
VCE= -2V, IC= -100mA (Note)
300
450
VCE= -2V, IC= -2A, (Note)
150
230
VCE= -2V, IC= -4A, (Note)
35
70
DC Current Gain
hFE
VCE= -2V, IC= -6A, (Note)
15
30
Transition Frequency
fT
VCE =-10V , IC= -50mA, f=100MHz
150
180
MHZ
Output Capacitance
COB
VCB= -10V, f=1MHz
21
30
pF
Turn-On Time
t(ON)
40
ns
Turn-Off Time
t(OFF)
VCC= -10V, IC= -1A
IB1= IB2= -20mA
670
ns
Note: Measured under pulsed conditions. Pulse width=300µs. Duty cycle≤2%



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