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UPC8026L-S08-R 데이터시트(PDF) 3 Page - Unisonic Technologies |
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UPC8026L-S08-R 데이터시트(HTML) 3 Page - Unisonic Technologies |
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3 / 4 page ![]() UPC8026 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R502-600.a ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain-Gate Voltage (RGS=20kΩ) VDGR 30 V Continuous (Note 2) ID 13 A Drain Current Pulsed (Note 2) IDM 52 A Avalanche Current IAR 13 A Single Pulsed (Note 4) EAS 44 mJ Avalanche Energy Repetitive (Note 3, 5) EAR 0.048 mJ Power Dissipation (Nota 3) PD 1.9 W Channel Temperature TCH 150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Ensure that the channel temperature does not exceed 150°C. 3. Device mounted on a glass-epoxy board FR-4,25.4×25.4×0.8(unit: mm) 4. VDD=24V, TCH =25°C (initial), L=0.2mH, IAR = 13A 5. Repetitive rating: pulse width limited by max channel temperature THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Ambient (Nota 3) θJA 65.8 °C/W |
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