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UT2N10L-TN3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 UT2N10L-TN3-R
상세설명  2 Amps,100 Volts N-CHANNEL POWER MOSFET
PDF  3 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
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UT2N10L-TN3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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UT2N10
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-511.a
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (Note 1)
VDSS
100
V
Gate-Source Voltage
VGSS
±10
V
Drain-Gate Voltage (RGS=1MΩ) (Note 1)
VDGR
100
V
Continuous
ID
2
A
Drain Current
Pulsed (Note 3)
IDM
5
A
Power Dissipation
PD
25
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
100
V
VDS = Rated BVDSS, VGS = 0V
1.0
Drain-Source Leakage Current
IDSS
VDS = 0.8 x Rated BVDSS,
VGS = 0V, TC = 125°C
25
µA
Forward
VGS=+10V, VDS=0V
+100
nA
Gate- Source Leakage Current
Reverse
IGSS
VGS=-10V, VDS=0V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
1.0
2.0
V
Drain-Source On Voltage (Note 2)
VDS(ON)
VGS=5V, ID=2A
2.1
V
Static Drain-Source On-State Resistance
(Note 2)
RDS(ON)
VGS=5V, ID=2A
1.050
Ω
DYNAMIC PARAMETERS
Input Capacitance
CISS
200
pF
Output Capacitance
COSS
80
pF
Reverse Transfer Capacitance
CRSS
VGS=0V, VDS=25V, f=1.0MHz
35
pF
Thermal Resistance Junction to Case
RθJC
5
°C/W
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
10
25
ns
Rise Time
tR
15
45
ns
Turn-OFF Delay Time
tD(OFF)
25
45
ns
Fall-Time
tF
VDD=50V, ID=2A, RG=6.25Ω,
RL=25 Ω, VGS=5V
20
25
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
(Note 2)
VSD
ISD=2A
1.4
V
Body Diode Reverse Recovery Time
tRR
ISD=2A, dISD/dt=50A/µs
100
ns
Note: 1. TJ = 25°C ~ 125°C.
2. Pulse test: pulse width≤300ms, duty cycle≤2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.



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