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UT06P03G-AB3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 UT06P03G-AB3-R
상세설명  P-CHANNEL ENHANCEMENT MODE
PDF  5 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT06P03G-AB3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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UT06P03
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-156.B
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-30
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
-4
Pulsed Drain Current (Note 1, 2)
IDM
-20
A
Total Power Dissipation
PD
0.78
W
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MAX
UNIT
Junction-to-Ambient
θJA
160
℃
/W
Junction-to-Case
θJC
18
℃
/W
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0 V, ID =-250µA
-30
V
Drain-Source Leakage Current
IDSS
VDS =-24V, VGS =0 V
1
µA
Gate-Source Leakage Current
IGSS
VDS =0 V, VGS = ±20V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID =-250 µA
-0.9
-1.5
-3
V
VGS =-4.5V, ID =-3A
60
75
Drain-Source On-State Resistance (Note 2)
RDS(ON)
VGS =-10V, ID =-4A
37
45
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
530
Output Capacitance
COSS
135
Reverse Transfer Capacitance
CRSS
VDS =-15V, VGS =0V, f=1MHz
70
pF
SWITCHING PARAMETERS
Turn-ON Delay Time (Note 2)
tD(ON)
5.7
Turn-ON Rise Time
tR
10
Turn-OFF Delay Time
tD(OFF)
18
Turn-OFF Fall Time
tF
VGS=-10V,VDS=-15V,RG=6Ω,
ID=-1A
5
ns
Total Gate Charge (Note 2)
QG
10
14
Gate-Source Charge
QGS
2.2
Gate-Drain Charge
QGD
VDS=0.5BVDSS, VGS =-10V,
ID =-4A
2
nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IF = -1A, VGS = 0V
-1.2
V
Maximum Body-Diode Continuous Current
IS
-2.1
Maximum Pulsed Drain-Source Diode
Forward Current (Note 1)
ISM
-4
A
Reverse Recovery Time
tRR
15.5
ns
Recovery Charge
QRR
IF=-4 A, dIF/dt=100A/μs
7.9
nC
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
3. Surface mounted on 1 in
2 copper pad of FR4 board.



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