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UT20N03L-TN3-R 데이터시트(PDF) 3 Page - Unisonic Technologies |
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UT20N03L-TN3-R 데이터시트(HTML) 3 Page - Unisonic Technologies |
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3 / 4 page ![]() UT20N03 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R502-139.B TYPICAL CHARACTERISTICS Gate Charge 16 14 12 10 6 8 4 2 0 24 0 6 8 1012 14 161820 21 Gate Charge, QG (nC) VGS=f(QGate) ID=15A Pulse 0.2 VDS max 0.5 VDS max 0.8 VDS max ID=f(VGS) VDS≥2×ID×RDS(ON)max tp=80μs 60 55 50 45 40 35 30 25 20 10 15 5 0 01 2 3 4 55.5 Gate-Source Voltage, VGS (V) Transfer Characteristics |
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