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UT30P04L-TN3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 UT30P04L-TN3-R
상세설명  P-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  3 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT30P04L-TN3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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UT30P04
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-465.b
ABSOLUTE MAXIMUM RATINGS (TA=25°C Unless Otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDS
-40
V
Gate-Source Voltage
VGS
±20
V
TC=25°C
-21
Continuous Drain Current
TC=70°C
ID
-17
Pulsed Drain Current (Note 2)
IDM
-70
Avalanche Current
IAS
-27
A
Avalanche Energy (Note 3)
L=0.1mH
EAS
36
mJ
TC=25°C
30
Power Dissipation
TC=70°C
PD
20
W
Operating Junction Temperature
TJ
-55~150
°C
Storage Temperature
TSTG
-55~150
°C
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by maximum junction temperature.
3. VDD=-20V. Starting TJ=25°C.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
40
°C/W
Junction to Case
θJC
4.1
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=-250µA, VGS=0V
-40
V
VDS=-32V, VGS=0V
1
Drain-Source Leakage Current
IDSS
VDS=-30V, VGS=0V, TJ=125°C
10
µA
Gate- Source Leakage Current
IGSS
VDS=0V, VGS=±20V
±250 nA
On-State Drain Current (Note 1)
ID(ON)
VDS=-5V, VGS=-10V
-70
A
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250µA
-1
-2.5
-3
V
VGS=-5V, ID=-8A
65
73
VGS=-7V, ID=-8A
35
50
Static Drain-Source On-State
Resistance (Note 1)
RDS(ON)
VGS=-10V, ID=-10A
30
40
mΩ
Forward Transconductance (Note 1)
gFS
VDS=-10V, ID=-10A
20
S
Gate Resistance
Rg
VGS=0V, VDS=0V, f=1.0MHz
4.95
Ω
DYNAMIC PARAMETERS
Input Capacitance
CISS
1090
Output Capacitance
COSS
175
Reverse Transfer Capacitance
CRSS
VGS=0V, VDS=-20V, f=1.0MHz
91
pF
SWITCHING PARAMETERS
(Note 2)
QG (VGS=-10V)
17
Total Gate Charge
QG (VGS=-4.5V)
8.5
Gate to Source Charge
QGS
5.5
Gate to Drain Charge
QGD
VDS=0.5V(BR)DSS, ID=-18A
3
nC
Turn-ON Delay Time
tD(ON)
6
ns
Rise Time
tR
16
ns
Turn-OFF Delay Time
tD(OFF)
26
ns
Fall-Time
tF
VGS=-10V, VDS=-20V, ID≈-10A,
RGS=6Ω, RL=2Ω
10
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Current
IS
-21
A
Drain-Source Diode Forward Voltage
1
VSD
IF=-10A, VGS=0V
-1.2
V
Reverse Recovery Time
tRR
15.5
ns
Reverse Recovery Charge
QRR
IF=-10A, dIF/dt=100A/µs
7.9
nC
Note: 1. Pulsde test: Pulse width ≤300µsec, duty cycle ≤2%.
2. Independent of operating temperature.



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