UT40N04

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-467.a

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

40

V

Gate-Source Voltage

±20

V

25

Continuous Drain Current

20

Pulsed Drain Current (Note 1)

75

Avalanche Current

27

A

Avalanche Energy

L=0.1mH

37

mJ

30

Power Dissipation

20

W

Operating Junction Temperature

-55~150

°C

Storage Temperature

-55~150

°C

Note:1. Pulse width limited by maximum junction temperature.

2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

40

°C/W

Junction to Case

4.1

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

40

V

1

Drain-Source Leakage Current

10

µA

Gate- Source Leakage Current

±250

nA

On-State Drain Current (Note 1)

75

A

ON CHARACTERISTICS

Gate Threshold Voltage

2

2.4

3

V

26

50

22

45

Static Drain-Source On-State

Resistance (Note 1)

19

29

mΩ

Forward Transconductance (Note 1)

30

S

Gate Resistance

1.55

Ω

DYNAMIC PARAMETERS

Input Capacitance

1150

Output Capacitance

157

Reverse Transfer Capacitance

80

pF

SWITCHING PARAMETERS

(Note 2)

19

Total Gate Charge

9

Gate to Source Charge

4.5

Gate to Drain Charge

3

nC

Turn-ON Delay Time

10

ns

Rise Time

6

ns

Turn-OFF Delay Time

26

ns

Fall-Time

6

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Continuous Current

23

A

Drain-Source Diode Forward Voltage

(Note 1)

1.3

V

Reverse Recovery Time

38

ns

Reverse Recovery Charge

29

nC

Note: 1. Pulsde test: Pulse width ≤300µsec, duty cycle ≤2%.

2. Independent of Operating Temperature.