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UT70P02-TN3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 UT70P02-TN3-R
상세설명  P-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  5 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT70P02-TN3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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UT70P02
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-209.A
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-25
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current , VGS=4.5V
TC=25°C
ID
-75
A
Pulsed Drain Current (Note
1)
IDM
-350
A
Power Dissipation @ TC=25°C
PD
107
W
Junction Temperature
TJ
+175
W/℃
Strong Temperature
TSTG
-55 ~ +175
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction-to-Ambient
θJA
110
℃
/W
Junction-to-Case
θJC
1.4
℃
/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0 V, ID =-250 µA
-25
V
Breakdown Voltage Temperature
Coefficient
ΔBVDSS/ΔTJ
Reference to 25 , I
℃ D=-1mA
-0.018
V/°С
Drain-Source Leakage Current
IDSS
VDS =-30 V, VGS =0 V, TJ =25°C
-1
µA
Gate-Body Leakage Current
IGSS
VGS = ±20 V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID =-250 µA
-1
-3
V
VGS =-10 V, ID =-10 A
7
Static Drain-Source On-Resistance
(Note 2)
RDS(ON)
VGS =-4.5 V, ID =-10 A
10
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
2700
4200
pF
Output Capacitance
COSS
550
pF
Reverse Transfer Capacitance
CRSS
VDS =-25 V, VGS =0 V, f=1.0MHz
380
pF
SWITCHING PARAMETERS
Total Gate Charge(Note 2)
QG
33
52
nC
Gate Source Charge
QGS
7.5
nC
Gate Drain ("Miller") Charge
QGD
VDS =-24 V, VGS =-4.5 V,
ID =-30 A
24
nC
Turn-ON Delay Time(Note 2)
tD(ON)
11.2
ns
Turn-ON Rise Time
tR
77
ns
Turn-OFF Delay Time
tD(OFF)
35
ns
Turn-OFF Fall-Time
tF
VGS=-10 V, VDS=-15 V,
RD=0.5 Ω, ID =-30 A , RG =3.3 Ω
67
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Forward On Voltage(Note 2)
VSD
IS=-10 A,VGS=0V
-1.3
V
Reverse Recovery Time
tRR
28
ns
Reverse Recovery Charge
QRR
IS=-30 A, VGS=0 V,
dI/dt=100 A/μs
10
nC
Notes: 1.Pulse width limited by safe operating area.
2.Pulse width ≤ 300us , duty cycle ≤ 2%.



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