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UT2304L-AE2-R 데이터시트(PDF) 3 Page - Unisonic Technologies |
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UT2304L-AE2-R 데이터시트(HTML) 3 Page - Unisonic Technologies |
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3 / 5 page ![]() UT2304 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 5 www.unisonic.com.tw QW-R502-150.D TYPICAL CHARACTERISTICS TJ=25℃ TJ=150℃ 10.00 1.00 0.10 0.01 0.1 0.5 0.9 1.3 Source-to-Drain Voltage, VSD (V) Forward Characteristic of Reverse Diode Junction Temperature, TJ (℃) Gate Threshold Voltage vs. Junction Temperature 2.05 1.85 1.65 1.45 1.25 0 -50 50 100 150 |
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