 |
전자부품 데이터시트 검색엔진 |
|
|
전자부품 데이터시트 검색엔진 |
|
UT2312L-AE3-R 데이터시트(PDF) 1 Page - Unisonic Technologies |
|
|
|||||||||||||||||||||||||||||
UT2312L-AE3-R 데이터시트(HTML) 1 Page - Unisonic Technologies |
|
|
1 / 3 page  UNISONIC TECHNOLOGIES CO., LTD UT2312 Power MOSFET www.unisonic.com.tw 1 of 3 Copyright © 2009 Unisonic Technologies Co., Ltd QW-R502-205.D 20V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UT2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 33 mΩ @VGS = 4.5 V * RDS(ON) = 40 mΩ @VGS = 2.5 V * Advanced trench process technology * Excellent thermal and electrical capabilities * High density cell design for ultra low on-resistance SYMBOL 2.Gate 1.Source 3.Drain ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing UT2312L-AE3-R UT2312G-AE3-R SOT-23 S G D Tape Reel MARKING 23N L: Lead Free G: Halogen Free |
유사한 부품 번호 - UT2312L-AE3-R |
|
유사한 설명 - UT2312L-AE3-R |
|
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Korean ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
