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UT3006G-TN3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 UT3006G-TN3-R
상세설명  55A, 30V N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  3 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
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UT3006G-TN3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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UT3006
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-636.a
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
TC=25°C
55
A
Continuous
VGS@10V
TC=100°C
ID
39
A
Drain Current
Pulsed (Note 2)
IDM
160
A
Power Dissipation (TC=25°C)
PD
50
W
Junction Temperature
TJ
+175
°C
Storage Temperature
TSTG
-55~+175
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse test.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
110
°C/W
Junction to Case
θJC
3
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
30
V
Drain-Source Leakage Current
IDSS
VDS=30V, VGS=0V
10
µA
Forward
VDS=0V, VGS=+20V
+100 nA
Gate- Source Leakage Current
Reverse
IGSS
VDS=0V, VGS=-20V
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
1
3
V
VGS=10V, ID=30A
9
mΩ
Static Drain-Source On-State Resistance
(Note)
RDS(ON)
VGS=4.5V, ID=20A
16
mΩ
Forward Transconductance
gFS
VDS=10V, ID=30A
42
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
700 1120 pF
Output Capacitance
COSS
215
pF
Reverse Transfer Capacitance
CRSS
VGS=0V, VDS=25V, f=1.0MHz
155
pF
SWITCHING PARAMETERS
Total Gate Charge (Note)
QG
13
21
nC
Gate to Source Charge
QGS
2.5
nC
Gate to Drain Charge
QGD
VGS=4.5V, VDS=24V, ID=30A
9.5
nC
Gate Resistance
RG
f=1.0MHz
1.9
Ω
Turn-ON Delay Time (Note)
tD(ON)
8
ns
Rise Time
tR
85
ns
Turn-OFF Delay Time
tD(OFF)
20.5
ns
Fall-Time
tF
VDS=15V, ID=30A, RG=3.3Ω,
VGS=10V, RD=0.5 Ω
10
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note)
VSD
IS=30A, VGS=0V
1.2
V
Body Diode Reverse Recovery Time (Note)
trr
23
ns
Body Diode Reverse Recovery Charge
QRR
IS=10A, VGS=0V, dI/dt=100A/µs
14
µC
Note: Pulse test.



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