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UT3401ZG-AE3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 UT3401ZG-AE3-R
상세설명  P-CHANNEL ENHANCEMENT MODE
PDF  5 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT3401ZG-AE3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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UT3401Z
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-163.E
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNITS
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±12
V
Continuous (Note2)
ID
-4.2
A
Drain Current
Pulsed (Note3)
IDM
-30
A
Power Dissipation (Note 2)
PD
1.4
W
ESD(HBM)
±100
V
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. Pulse width ≤300µs, duty cycle ≤2%
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction to Ambient
θJA
65
90
°C/W
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=-250μA, VGS=0V
-30
V
Drain-Source Leakage Current
IDSS
VDS=-24V, VGS=0V
-1
µA
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±12V
±5µA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250μA
-0.7
-1
-1.3
V
VGS=-10V, ID=-4.2A
42
50
mΩ
VGS=-4.5V, ID=-4A
53
65
mΩ
Drain-Source On-State Resistance (Note 2)
RDS(ON)
VGS=-2.5V, ID=-1A
80
120
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
954
pF
Output Capacitance
COSS
115
pF
Reverse Transfer Capacitance
CRSS
VGS =0V, VDS =-15V, f=1MHz
77
pF
SWITCHING PARAMETERS
Turn-ON Delay Time (Note 2)
tD(ON)
6.3
ns
Turn-ON Rise Time
tR
3.2
ns
Turn-OFF Delay Time
tD(OFF)
38.2
ns
Turn-OFF Fall Time
tF
VGS=-10V, VDS=-15V
RL=3.6Ω, RG =6Ω
12
ns
Total Gate Charge (Note 2)
QG
9.4
nC
Gate-Source Charge
QGS
2
nC
Gate-Drain Charge
QGD
VGS=-4.5V, VDS=-15V, ID=-4A
3
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
VSD
VDS=0V, IS=-1A
-0.75
-1
V
Maximum Continuous Drain-Source Diode
Forward Current
IS
-2.2
A
Reverse Recovery Time
tRR
20.2
ns
Reverse Recovery Charge
QRR
IF=-4A, dI/dt=100A/μs
11.2
nC
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300µs, duty cycle ≤2%
3. Surface mounted on 1 in
2 copper pad of FR4 board



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