UT3419G-AE3-R datasheet(3/3 Pages) UTC

3 / 3 page

UT3419

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 3

www.unisonic.com.tw

QW-R502-391.C

ELECTRICAL CHARACTERISTICS (Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

IS=-1A, VGS =0V

-0.65

-0.81

-0.95

Maximum Body-Diode Continuous Current

-2

Body Diode Reverse Recovery Time

trr

IF=-3.5A, dI/dt=100A/μs

9.8

Body Diode Reverse Recovery Charge

QRR

IF=-3.5A, dI/dt=100A/μs

2.7

Note: 3. The θJA is the sum of the thermal impedance from junction to lead θJL and lead to ambient.

4. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air

environment with TA=25°C. The SOA curve provides a single pulse rating.

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UT3419G-AE3-R 데이터시트(PDF) 3 Page - Unisonic Technologies

UT3419G-AE3-R 데이터시트(HTML) 3 Page - Unisonic Technologies

Html Pages

1 2 3

데이터시트 다운로드

링크 URL