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UT4411L-S08-R 데이터시트(PDF) 3 Page - Unisonic Technologies

부품명 UT4411L-S08-R
상세설명  P-CHANNEL ENHANCEMENT MODE
PDF  6 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT4411L-S08-R 데이터시트(HTML) 3 Page - Unisonic Technologies

  UT4411L-S08-R Datasheet HTML 1Page - Unisonic Technologies UT4411L-S08-R Datasheet HTML 2Page - Unisonic Technologies UT4411L-S08-R Datasheet HTML 3Page - Unisonic Technologies UT4411L-S08-R Datasheet HTML 4Page - Unisonic Technologies UT4411L-S08-R Datasheet HTML 5Page - Unisonic Technologies UT4411L-S08-R Datasheet HTML 6Page - Unisonic Technologies  
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UT4411
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 6
www.unisonic.com.tw
QW-R502-191.B
ABSOLUTE MAXIMUM RATINGS (TA = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
-8
A
Pulsed Drain Current
IDM
-40
A
Power Dissipation
PD
3
W
Junction Temperature
TJ
+150
℃
Strong Temperature
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction-to-Ambient
θJA
54
75
℃
/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0 V, ID =-250 µA
-30
V
Zero Gate Voltage Drain Current
IDSS
VDS =-24 V, VGS =0 V
-1
µA
Gate-Body Leakage Current
IGSS
VDS =0 V, VGS = ±20 V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID =-250 µA
-1.2
-2
-2.4
V
On State Drain Current
ID(ON)
VDS =-5V, VGS =-10 V
-40
A
VGS =-10 V, ID =-8 A
24.5
32
Static Drain-Source On-Resistance
RDS(ON)
VGS =-4.5 V, ID =-5 A
41
55
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
920
1120
Output Capacitance
COSS
190
Reverse Transfer Capacitance
CRSS
VDS =-15V, VGS =0V, f=1MHz
122
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
18.4
23
Gate Source Charge
QGS
2.7
Gate Drain Charge
QGD
VDS =-15V, VGS =-10V,
ID =-8A
4.9
nC
Turn-ON Delay Time
tD(ON)
7.1
Turn-ON Rise Time
tR
3.4
Turn-OFF Delay Time
tD(OFF)
18.9
Turn-OFF Fall-Time
tF
VGS=-10V,VDS=-15V,
RL=1.8Ω, RGEN =3Ω
8.4
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS=-1A,VGS=0V
-0.76
-1
V
Maximum Body-Diode Continuous Current
IS
-4.2
A
Body Diode Reverse Recovery Time
tRR
IF=-8A, dI/dt=100A/μs
21.5
27
ns
Body Diode Reverse Recovery Charge
QRR
IF=-8 A, dI/dt=100A/μs
12.5
nC
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤0.5% max.
3. Surface mounted on 1 in
2 copper pad of FR4 board, t≤10s.



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