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UT4422G-S08-R 데이터시트(PDF) 1 Page - Unisonic Technologies |
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UT4422G-S08-R 데이터시트(HTML) 1 Page - Unisonic Technologies |
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1 / 6 page ![]() UNISONIC TECHNOLOGIES CO., LTD UT4422 Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2010 Unisonic Technologies Co., Ltd QW-R502-206.B N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT4422 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 15mΩ @VGS = 10 V * Low Capacitance * Low Gate Charge * Fast Switching Capability * Avalanche Energy Specified ORDERING INFORMATION Ordering Number Package Packing UT4422G-S08-R SOP-8 Tape Reel |
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