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UT4822G-S08-R 데이터시트(PDF) 4 Page - Unisonic Technologies

부품명 UT4822G-S08-R
상세설명  DUAL N-CHANNEL ENHANCEMENT MODE
PDF  6 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT4822G-S08-R 데이터시트(HTML) 4 Page - Unisonic Technologies

  UT4822G-S08-R Datasheet HTML 1Page - Unisonic Technologies UT4822G-S08-R Datasheet HTML 2Page - Unisonic Technologies UT4822G-S08-R Datasheet HTML 3Page - Unisonic Technologies UT4822G-S08-R Datasheet HTML 4Page - Unisonic Technologies UT4822G-S08-R Datasheet HTML 5Page - Unisonic Technologies UT4822G-S08-R Datasheet HTML 6Page - Unisonic Technologies  
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UT4822
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
4 of 6
www.unisonic.com.tw
QW-R502-149.D
TYPICAL CHARACTERISTICS
VDS=5V
125°С
25°С
2.00E+01
1.60E+01
1.20E+01
8.00E+00
4.00E+00
0.00E+00
1.5
2
2.5
3
3.5
4
Gate Source Voltage, VGS (V)
Transfer Characteristics
4.5V
4V
10V
3.5V
VGS=3V
30
25
20
15
10
5
0
01
2
3
45
Drain Source Voltage, VDS (V)
On-Resistance Characteristics
Pulse width ≤80us,
duty cycle ≤0.5%.
Pulse width ≤80us,
duty cycle ≤0.5%.
25°С
125°С
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.00.2
0.40.6
0.8
1.0
Source Drain Voltage, VSD (V)
Body-Diode Characteristics
ID=8.5A
125°С
25°С
50
40
30
20
10
24
6
8
10
Gate Source Voltage, VGS (V)
On-Resistance vs. Gate-Source Voltage
Pulse width ≤80us,
duty cycle ≤0.5%.
Pulse width ≤80us,
duty cycle ≤0.5%.
VDS=15V
ID=8.5A
10
8
6
4
2
0
04
8
12
16
20
Gate Charge, QG (nC)
Gate-Charge Characteristics
CISS
COSS
CRSS
1500
1250
1000
750
500
250
0
05
10
15
20
25
30
Drain Source Voltage, VDS (V)
Capacitance Characteristics
Pulse width ≤80us,
duty cycle ≤0.5%.
Pulse width ≤80us,
duty cycle ≤0.5%.



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