| 전자부품 데이터시트 검색엔진 |
|
UT6401 데이터시트(PDF) 2 Page - Unisonic Technologies |
|
|
|||||||||||||||||||||||||||||
UT6401 데이터시트(HTML) 2 Page - Unisonic Technologies |
|
2 / 5 page ![]() UT6401 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 5 www.unisonic.com.tw QW-R502-151.B ABSOLUTE MAXIMUM RATINGS (TA = 25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -30 Gate-Source Voltage VGSS ±12 V Continuous Drain Current (Note 3) ID -5 Pulsed Drain Current (Note 2) IDM -30 A Power Dissipation PD 2 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL MIN TYP MAX UNIT Junction to Ambient (Note 3) θJA 74 110 /W ℃ ELECTRICAL CHARACTERISTICS (TJ=25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=-250uA -30 V Drain-Source Leakage Current IDSS VDS=-24V, VGS=0V -1 uA Gate-Source Leakage Current IGSS VDS=0V, VGS=±12V ±100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=-250uA -0.7 -1 -1.3 V On State Drain Current ID(ON) VDS=-5V, VGS=-4.5V -25 A VGS=-10V, ID=-5A 42 49 mΩ VGS=-4.5V, ID=-4A 53 64 mΩ Static Drain-Source On-Resistance (Note 2) RDS(ON) VGS=-2.5V, ID=-1A 81 119 mΩ DYNAMIC CHARACTERISTICS Input Capacitance CISS 943 pF Output Capacitance COSS 108 pF Reverse Transfer Capacitance CRSS VGS=0V,VDS=-15V,f=1.0MHz 73 pF SWITCHING CHARACTERISTICS Turn-ON Delay Time (Note 2) tD(ON) 6 ns Turn-ON Rise Time tR 3 ns Turn-OFF Delay Time tD(OFF) 40 ns Turn-OFF Fall Time tF VDS=-15V, VGS=-10V, RG=6Ω, RL=3Ω 11 ns Total Gate Charge (Note 2) QG 9.5 nC Gate-Source Charge QGS 2.1 nC Gate-Drain Charge QGD VDS=-15V, VGS=-4.5V, ID=-5A 2.9 nC SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage(Note2) VSD IS=-1A, VGS=0V -0.75 -1 V Maximum Continuous Drain-Source Diode Forward Current IS -3 A Notes: 1. Pulse width limited by TJ(MAX) 2. Pulse width ≤300us, duty cycle ≤0.5%. 3. Surface mounted on 1 in 2 copper pad of FR4 board. |
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |