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UTD452-TN3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 UTD452-TN3-R
상세설명  N-CHANNEL ENHANCEMENT MODE
PDF  4 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UTD452-TN3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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UTD452
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R502-253.A
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
25
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
TC=25°C
ID
55
A
Pulsed Drain Current
IDM
100
A
Avalanche Current
IAR
30
A
Repetitive avalanche energy L=0.1mH
EAR
135
mJ
Power Dissipation
TC=25°C
PD
50
W
Junction Temperature
TJ
+175
℃
Storage Temperature
TSTG
-55 ~ +175
℃
Note:1.
2.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Pulse width limited by TJ(MAX)
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction-to-Ambient
θJA
39
50
/W
℃
Junction-to-Case
θJC
2.5
3
/W
℃
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
25
V
Drain-Source Leakage Current
IDSS
VDS=20V, VGS=0V
1
µA
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±20V
100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
1
1.8
3
V
On State Drain Current
ID(ON)
VDS=5V, VGS=10V
100
A
VGS=10V, ID=30A
6.5
8.5
Static Drain-Source On-Resistance
RDS(ON)
VGS=4.5V, ID=20A
11.5
14
mΩ
Forward Transconductance
gFS
VDS=5V, ID=10A
35
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
1230 1476
pF
Output Capacitance
COSS
315
pF
Reverse Transfer Capacitance
CRSS
VDS=12.5V, VGS=0V, f=1MHz
190
pF
SWITCHING PARAMETERS
10V
26.4
32
Total Gate Charge
4.5V
QG
13.5
nC
Gate Source Charge
QGS
3.9
nC
Gate Drain Charge
QGD
VDS=12.5V, VGS=10V, ID=20A
7.75
nC
Turn-ON Delay Time
tD(ON)
6.5
ns
Turn-ON Rise Time
tR
10
ns
Turn-OFF Delay Time
tD(OFF)
22.7
ns
Turn-OFF Fall-Time
tF
VGS=10V, VDS=12.5V,
RL=0.6Ω, RG=3Ω
6.2
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS=1A, VGS=0V
0.72
1
V
Maximum Body-Diode Continuous Current
IS
55
A
Body Diode Reverse Recovery Time
tRR
IF=20A, dI/dt=100A/μs
23.06 27.5
ns
Body Diode Reverse Recovery Charge
QRR
IF=20A, dI/dt=100A/μs
15.25
nC



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