UTD3055

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R502-460.a

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

60

V

60

V

Continuous

±20

V

Gate-Source Voltage

±25

V

Continuous @ 25°C

12

A

Continuous @ 100°C

7.3

A

Drain Current

37

A

Single Pulse Drain–to–Source Avalanche

72

mJ

Total Power Dissipation @ 25°C

48

W

minimum recommended pad size

1.75

W

Operating Junction Temperature

-55~175

°C

Storage Temperature

-55~175

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

100

W/°C

Junction to Case

3.13

W/°C

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

60

V

Drain-Source Breakdown Voltage

Temperature Coefficient (Positive)

65

mV/°C

10

Drain-Source Leakage Current

100

µA

Gate- Source Leakage Current

100

nA

ON CHARACTERISTICS

(Note)

2.0

2.7

4.0

V

Gate Threshold Voltage

Temperature Coefficient (Negative)

5.4

mV/°C

Static Drain-Source On-State

Resistance

0.10 0.15

Ω

1.3

2.2

1.9

V

Forward Transconductance

4.0

5.0

S

DYNAMIC PARAMETERS

Input Capacitance

410 500

pF

Output Capacitance

130 180

pF

Reverse Transfer Capacitance

25

50

pF

Note: Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%.