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UTR4502L-AE2-R 데이터시트(PDF) 3 Page - Unisonic Technologies |
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UTR4502L-AE2-R 데이터시트(HTML) 3 Page - Unisonic Technologies |
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3 / 4 page ![]() UTR4502 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R502-234.C TYPICAL CHARACTERISTICS 0 0 -50 Drain Current vs. Gate Threshold Voltage Gate Threshold Voltage, VTH (mV) -1000 -250 -500 -100 -150 -200 -300 Drain Current vs. Drain-Source Breakdown Voltage 0 0 -50 Drain-Source Breakdown Voltage, BVDSS(V) -30 -250 -10 -100 -150 -200 -300 -20 -1500 -40 -150 -2.5 0 0 -1.0 -1.5 -2.0 Drain-Source On-State Resistance Characteristics Drain to Source Voltage, VDS (mV) -0.5 -100 -50 VGS=-10V ID=-1.95A -200 VGS=-4.5V ID=-1.5A |
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