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UTT12P10L-TN3-R 데이터시트(PDF) 3 Page - Unisonic Technologies

부품명 UTT12P10L-TN3-R
상세설명  100V, 12A P-CHANNEL POWER MOSFET
PDF  6 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UTT12P10L-TN3-R 데이터시트(HTML) 3 Page - Unisonic Technologies

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UTT12P10
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 6
www.unisonic.com.tw
VER.a
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=-80V, VGS=-10V, ID=-19A,
See Fig 3 (Note 2)
21
27
nC
Gate to Source Charge
QGS
4.6
nC
Gate to Drain ("Miller") Charge
QGD
11.5
nC
Turn-ON Delay Time
tD(ON)
VDD=-50V, ID=-19A, RG=9.1Ω,
RD = 2.4Ω, See Fig. 1(Note 2)
16
ns
Rise Time
tR
73
ns
Turn-OFF Delay Time
tD(OFF)
34
ns
Fall-Time
tF
57
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
-19
A
Maximum Body-Diode Pulsed Current
ISM
(Note 1)
-72
A
Drain-Source Diode Forward Voltage
VSD
TJ=25°C, IS=-19A,VGS=0V(Note 2)
-5.0
V
Body Diode Reverse Recovery Time
tRR
TJ=25°C, IF=-19A,
di/dt=100A/µs (Note 2)
130 260
ns
Body Diode Reverse Recovery Charge
QRR
0.35 0.70
µC
Notes: 1. Repetitive rating; pulse width limited by max. junction temperature.
2. Pulse width≤300µs; duty cycle≤2%.



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