UTT18P06

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-713.a

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-60

V

Gate-Source Voltage

±20

V

Drain Current

Continuous

-18.3

A

Pulsed

-73.2

A

Single Pulsed Avalanche Current (L=0.1mH)

-18.3

A

Single Pulsed Avalanche Energy (L=0.1mH) (Note 1)

24.2

mJ

Power Dissipation (Note 2)

38.5

W

2.3

W

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

Steady state

55

°C/W

Junction to Case

3.25

°C/W

Notes: 1. Duty cycle≤1 %.

2. See SOA curve for voltage derating.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-60

V

Drain-Source Leakage Current

-1

µA

Gate-Source Leakage Current

Forward

+100

nA

Reverse

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

-1

-3

V

Static Drain-Source On-State Resistance

0.048 0.060

Ω

On State Drain Current (Note 1)

-30

A

DYNAMIC PARAMETERS

(Note 2)

Input Capacitance

(Note 2)

1140 1710

pF

Output Capacitance

130

pF

Reverse Transfer Capacitance

90

pF