UTT30N06L-TN3-R datasheet(2/8 Pages) UTC

2 / 8 page

UTT30N06

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 8

www.unisonic.com.tw

QW-R502-637.A

ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

TC = 25°C

Continuous

TC = 100°C

21.3

Drain Current

Pulsed (Note 1)

IDM

120

Single Pulsed (Note 2)

EAS

300

Avalanche Energy

Repetitive (Note 1)

EAR

Peak Diode Recovery dv/dt (Note 3)

dv/dt

7.5

V/ns

TO-220

Power Dissipation

TO-252

Junction Temperature

+150

°C

Operation Temperature

TOPR

-55~+150

°C

Storage Temperature

TSTG

-55~+150

°C

Notes:

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

1. Repeativity rating: pulse width limited by junction temperature

2. L=0.66mH, IAS=30A, VDD=25V, RG=20Ω, Starting TJ=25°C

3. ISD≤50A, di/dt≤300A/μs, VDD≤BVDSS, Starting TJ=25°C

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220

Junction to Ambient

TO-252

θJA

°C/W

TO-220

1.4

Junction to Case

TO-252

θJC

2.85

°C/W

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