UTT30P04

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-613.a

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-40

V

Gate-Source Voltage

±20

V

-21

Continuous Drain Current

-17

Pulsed Drain Current (Note 2)

-70

Avalanche Current

-27

A

Avalanche Energy (Note 3)

L=0.1mH

36

mJ

30

Power Dissipation

20

W

Junction Temperature

-55~150

°C

Storage Temperature

-55~150

°C

Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width limited by maximum junction temperature.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

40

°C/W

Junction to Case

4.1

°C/W