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X1049AL-T92-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 X1049AL-T92-R
상세설명  HIGH GAIN TRANSISTOR
PDF  4 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

X1049AL-T92-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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X1049A
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R201-061.C
ABSOLUTE MAXIMUM RATING (TA=25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
DC
IC
4
A
Pulse
20
A
Base Current
IB
500
mA
Power Dissipation
PD
1
W
Junction Temperature
TJ
125
Operating Temperature
TOPR
-20 ~ +85
Storage Temperature
TSTG
-40 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
VCBO
IC=100μA
80
120
V
Collector-Emitter Breakdown Voltage
VCEO
IC=10mA
25
35
V
Collector-Emitter Breakdown Voltage
VCES
IC=100μA
80
120
V
Collector-Emitter Breakdown Voltage
VCEV
IC=100μA, VEB=1V
80
120
V
Emitter-Base Breakdown Voltage
VEBO
IE=100μA
5
8.75
V
Collector Cut-Off Current
ICBO
VCB=50V
0.3
10
nA
Emitter Cut-Off Current
IEBO
VEB=4V
0.3
10
nA
Collector Emitter Cut-Off Current
ICES
VCES=50V
0.3
10
nA
Collector-Emitter Saturation Voltage
(Note)
VCE(SAT)
IC=0.5A, IB=10mA
30
70
mV
IC=1A, IB=10mA
60
130
IC=2A, IB=10mA
125
280
IC=4A, IB=50mA
155
400
Base-Emitter Saturation Voltage (Note)
VBE(SAT) IC=4A, IB=50mA
890
980
mV
Base-Emitter Turn-On Voltage (Note)
VBE(ON) IC=4A, VCE=2V
820
920
mV
DC Current Gain (Note)
hFE
IC=10mA, VCE=2V
250
430
IC=0.5A, VCE=2V
300
450
IC=1A, VCE=2V
300
450
1200
IC=4A, VCE=2V
200
350
IC=20A, VCE=2V
7
Transition Frequency
fT
IC=50mA, VCE=10V, f=50MHz
180
MHz
Output Capacitance
COBO
VCB=10V, f=1MHz
45
60
pF
Turn-On Time
tON
IC=4A, IB=40mA, VCC=10V
125
ns
Turn-Off Time
tOFF
IC=4A, IB=±40mA, VCC=10V
380
ns
Note: Measured under pulsed conditions. Pulse width=300μs. Duty cycle ≤2%



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