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TIP31C-TN3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 TIP31C-TN3-R
상세설명  NPN EXPITAXIAL PLANAR TRANSISTOR
PDF  3 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

TIP31C-TN3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

  TIP31C-TN3-R Datasheet HTML 1Page - Unisonic Technologies TIP31C-TN3-R Datasheet HTML 2Page - Unisonic Technologies TIP31C-TN3-R Datasheet HTML 3Page - Unisonic Technologies  
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TIP31C
NPN EXPITAXIAL TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R203-010.D
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
5
V
DC
3
A
Collector Current
Pulse
IC
5
A
Base Current
IB
1
A
TO-126
10
W
TO-220
40
W
Collector Dissipation (TC=25°C)
TO-252
PC
15
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-65 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TC=25°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector Emitter Sustaining Voltage (Note)
BVCEO
IC=30mA, IB=0
100
V
Collector Cutoff Current
ICES
VCB=100V, VEB=0
200
μA
Collector Cutoff Current
ICEO
VCE=60V, IB=0
0.3
mA
Emitter Cutoff Current
IEBO
VBE=5V, IC=0
1
mA
Collector-Emitter Saturation Voltage (Note)
VCE(SAT)
IC=3A, IB=375mA
1.2
V
Base-Emitter On Voltage (Note)
VBE(ON)
IC=3A, VCE=4V
1.8
V
hFE1
IC=1A, VCE=4V
25
DC Current Gain (Note)
hFE2
IC=3A, VCE=4V
10
50
Current Gain Bandwidth Product
fT
IC=0.5A, VCE=10V f=1MHz
3
MHz
Note: Pulse Test: PW≤300μs, Duty Cycle≤2%



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