UNISONIC TECHNOLOGIES CO., LTD

TUL1102

NPN SILICON TRANSISTOR

www.unisonic.com.tw

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Copyright © 2011 Unisonic Technologies Co., Ltd

QW-R203-034.B

HIGH VOLTAGE

FAST-SWITCHING NPN

POWER TRANSISTOR

DESCRIPTION

The TUL1102 is manufactured which is using high voltage

Multi Epitaxial Planar technology for high voltage capability

and high switching speeds. For enhancing switching speeds

while maintaining a wide RBSOA, the TUL1102 uses a

Cellular Emitter structure with planar edge termination.

Because of an increased intermediate layer which has an

intrinsic ruggedness, and it enables the transistor to withstand

a high collector current level during Breakdown condition,

without using the transil protection.

FEATURES

* High voltage

* Dynamic parameters: low spread

* For reliable operation: minimum lot-to-lot spread

* High switching speed

TO-220

1

TO-263

1

1

TO-220F1

ORDERING INFORMATION

Ordering Number

Package

Pin Assignment

Packing

Lead Free Plating

Halogen-Free

1

2

3

TUL1102L-TA3-T

TUL1102G-TA3-T

TO-220

B

C

E

Tube

TUL1102L-TF1-T

TUL1102G-TF1-T

TO-220F1

B

C

E

Tube

TUL1102L-TQ2-T

TUL1102G-TQ2-T

TO-263

B

C

E

Tube

TUL1102L-TQ2-R

TUL1102G-TQ2-R

TO-263

B

C

E

Tape Reel

(1) T: Tube, R: Tape Reel

(2) TA3: TO-220, TF1: TO-220F1, TQ2: TO-263

(3) G: Halogen Free, L: Lead Free

TUL1102L-TA3-T

(1)Packing Type

(2)Package Type

(3)Lead Free