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TUL1102G-TQ2-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 TUL1102G-TQ2-R
상세설명  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
PDF  5 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

TUL1102G-TQ2-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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TUL1102
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R203-034.B
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Emitter Voltage (VBE = 0)
VCES
1100
V
Collector-Emitter Voltage (IB = 0)
VCEO
450
V
Emitter-Base Voltage (IC = 0)
VEBO
12
V
Collector Current
IC
4
A
Collector Peak Current (tP <5 ms)
ICM
8
A
Base Current
IB
2
A
Base Peak Current (tP <5 ms)
IBM
4
A
Power Dissipation
(TC = 25℃)
TO-220/TO-263
PD
70
W
TO-220F1
30
Junction Temperature
TJ
+
150
℃
Storage Temperature
TSTG
-65 ~ +150
℃
Note: Absolute maximum ratings are the values beyond which the device will be damaged permanently.
Absolute maximum ratings are only stress ratings and it is not implied for functional device operation.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Case
TO-220/TO-263
θJC
1.78
℃
/W
TO-220F1
4.2
ELECTRICAL CHARACTERISTICS (TC = 25℃ unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector Cut-off Current
ICES
VCE = 1100 V, VBE = 0
100
µA
Emitter Cut-off Current
IEBO
VEB = 12 V, IB = 0
1
mA
Collector-Emitter Sustaining Voltage
VCEO(SUS) IC = 100mA, IB = 0 (Note)
450
V
Collector-Emitter Saturation Voltage
VCE(SAT) IC = 2 A, IB = 400 mA (Note)
1.5
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC = 2 A, IB = 400 mA (Note)
1.5
V
DC Current Gain (Note)
hFE
IC = 250mA, VCE = 5 V
IC = 2A, VCE =5V
35
12
70
20
Resistive Load
Storage Time
tS
IC = 2.5 A,
VCC= 250 V
IB1=0.5A,IB2=1A
2.5
µs
Fall Time
tF
TP = 30 ms
300
ns
Avalanche Energy
EAR
L = 2mH, C = 1.8nF
IBR ≤ 2.5A, 25℃< TC <125℃
6
mJ
Note: Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %



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