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2DB1184Q-13 데이터시트(PDF) 2 Page - Diodes Incorporated

부품명 2DB1184Q-13
상세설명  50V PNP SURFACE MOUNT TRANSISTOR IN TO252-3L
PDF  6 Pages
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제조업체  DIODES [Diodes Incorporated]
홈페이지  http://www.diodes.com
Logo DIODES - Diodes Incorporated

2DB1184Q-13 데이터시트(HTML) 2 Page - Diodes Incorporated

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2DB1184Q
Document number: DS31504 Rev. 4 - 2
2 of 6
www.diodes.com
June 2011
© Diodes Incorporated
2DB1184Q
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-5
V
Continuous Collector Current
IC
-3
A
Peak Pulse Collector Current
ICM
-4.5
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Power Dissipation
PD
15
W
Thermal Resistance, Junction to Case
RθJC
8.3
°C/W
Power Dissipation (Note 4)
PD
1.2
W
Thermal Resistance, Junction to Ambient
RθJA
104
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Notes:
4. Device mounted on FR-4 PCB with minimum pad size recommended.
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
BVCBO
-60
⎯
⎯
V
IC = -50μA, IE = 0
Collector-Emitter Breakdown Voltage
BVCEO
-50
⎯
⎯
V
IC = -1mA, IB = 0
Emitter-Base Breakdown Voltage
BVEBO
-5
⎯
⎯
V
IE = -50μA, IC = 0
Collector Cutoff Current
ICBO
⎯
⎯
-1
μA
VCB = -40V, IE = 0
Emitter Cutoff Current
IEBO
⎯
⎯
-1
μA
VEB = - 4V, IC = 0
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
VCE(sat)
⎯
⎯
-1
V
IC = -2A, IB = -0.2A
Base-Emitter Saturation Voltage
VBE(sat)
⎯
⎯
-1.2
V
IC = -1.5A, IB = -0.15A
DC Current Gain
hFE
120
⎯
270
⎯
VCE = -3V, IC = -0.5A
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
fT
⎯
110
⎯
MHz
VCE = -5V, IC = -0.1A,
f = 30MHz
Output Capacitance
Cobo
⎯
26
⎯
pF
VCB = -10V, f = 1MHz
Notes:
5. Measured under pulsed conditions. Pulse width = 300
μs. Duty cycle ≤2%.



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