8T10AI-SW datasheet(2/7 Pages) NELLSEMI

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I - II - III

MAX.

100

ALL

MAX.

I - III - IV

MAX.

MIN.

(2)

MAX.

Vt0

(2)

Threshold voltage

MAX.

Dynamic resistance

MAX.

IDRM

IRRM

MAX.

Note 1: minimum l

is guaranted at 5% of l

max.

Note 2: for both polarities of A2 referenced to A1.

QUADRANT

8Txxxx

V = 12 V, R = 30Ω

V = V

, R = 3.3KΩ,

DRM

T = 125°C

I = 200 mA

I = 1.2 I

V = 67% V

, gate open, T = 125°C

DRM

(dI/dt)c = 3.5 A/ms, T = 125°C

1.3

0.2

V/µs

200

400

= 11 A,

t = 380 µs

T = 125°C

T = 25°C

T = 125°C

T = 25°C

1.55

0.85

µA

mΩ

STATIC CHARACTERISTICS

UNIT

VALUE

UNIT

TEST CONDITIONS

SYMBOL

8Txxxx

Unit

(1)

I - II - III

VGT

I - II - III

VGD

I - II - III

(2)

MAX.

I - III

MAX.

(2)

dV/dt

MIN.

(dI/dt)c(2)

MIN.

A/ms

MAX.

MIN.

V = 12 V, R = 30Ω

V = V

, R = 3.3KΩ

DRM

T = 125°C

I = 100 mA

I = 1.2 I

V = 67% V

gate open ,T = 125°C

DRM

(dV/dt)c = 0.1 V/µs

(dV/dt)c = 10 V/µs

Without snubber

T = 125°C

MAX.

3.5

1.5

1.3

0.2

1000

5.4

2.8

V/µs

TEST CONDITIONS

QUADRANT

SYMBOL

400

4.5

SNUBBERLESS and Logic level (3 quadrants)

Standard (4 quadrants)

(1)

VGT

VGD

(2)

dV/dt

(2)

(dV/dt)c

(2)

SEMICONDUCTOR

8T Series RoHS

RoHS

ºC unless otherwise specified)

J= 25

ELECTRICAL CHARACTERISTICS

ºC unless otherwise specified)

J= 25

ELECTRICAL CHARACTERISTICS

V = V

DRM

V = V

RRM

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