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AFT05MS031N 데이터시트(PDF) 3 Page - Freescale Semiconductor, Inc

부품명 AFT05MS031N
상세설명  RF Power LDMOS Transistors
PDF  27 Pages
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제조업체  FREESCALE [Freescale Semiconductor, Inc]
홈페이지  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

AFT05MS031N 데이터시트(HTML) 3 Page - Freescale Semiconductor, Inc

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AFT05MS031NR1 AFT05MS031GNR1
3
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA =25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS = 13.6 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Crss
—
1.6
—
pF
Output Capacitance
(VDS = 13.6 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Coss
—
49.5
—
pF
Input Capacitance
(VDS = 13.6 Vdc, VGS =0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
109
—
pF
Functional Tests (1) (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 13.6 Vdc, IDQ =10 mA, Pout = 31W,f= 520 MHz
Common--Source Amplifier Power Gain
Gps
16.5
17.7
19.0
dB
Drain Efficiency
ηD
70.0
71.4
—
%
Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system, IDQ =10 mA)
Frequency
(MHz)
Signal
Type
VSWR
Pout
(W)
Test Voltage, VDD
Result
520
CW
>65:1 at all Phase Angles
47
(3 dB Overdrive)
17
No Device Degradation
1. Measurement made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.



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