TLE4206 datasheet(8/14 Pages) SIEMENS

8 / 14 page

TLE 4206

Semiconductor Group

1998-02-01

Input-Interface

Input REF

Quiescent voltage

REFq

–200 –

REF = 0 µA

Input resistance

REF

–6

–

Ω 0 V < V

REF < 0.5 V

Input FB

Quiescent voltage

FBq

–200 –

FB = 0 µA

Input resistance

–6

–

Ω 0 V < V

FB < 0.5 V

Input/Output HYST

Current Amplification

HYST = IHYST / (IREF – IFB)

HYST

0.8

0.95 1.1

−

–20

µA < I

HYST

< – 10

µA;

µA < I

HYST

< 20

µA;

REF =250 µA

HYST = VS / 2

Current Offset

HYSTIO

–2

0.5

µA

REF = IFB =250 µA

HYST = VS / 2

Threshold voltage High

HYH / VS

–52

–

Deadband voltage High

DBH / VS

–50.4 –

–

Deadband voltage Low

DBL / VS

–49.6 –

–

Threshold voltage Low

HYL / VS

–48

–

Hysteresis Window

HYW / VS

(

HYH – VHYL)/ VS

Deadband Window

DBW / VS

0.4

0.8

1.2

(

DBH – VDBL)/ VS

Electrical Characteristics (cont’d)

8 V <

S < 18 V; IOUT1-2 = 0 A; – 40 °C < Tj < 150 °C

(unless otherwise specified)

Parameter

Symbol

Limit Values

Unit Test Condition

min.

typ. max.

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