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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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BQ24272 데이터시트(PDF) 4 Page - Texas Instruments |
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BQ24272 데이터시트(HTML) 4 Page - Texas Instruments |
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4 / 32 page  bq24272 SLUSB09 – JUNE 2012 www.ti.com RECOMMENDED OPERATING CONDITIONS MIN MAX UNITS IN voltage range 4.2 18(1) V VIN IN operating range 4.2 10 IIN Input current 2.5 A ISYS Output current from SW, DC 3 A Charging 2.5 IBAT A Discharging, using internal battery FET 2.5 TJ Operating junction temperature range 0 125 °C (1) The inherent switching noise voltage spikes should not exceed the absolute maximum rating on either the BOOT or SW pins. A tight layout minimizes switching noise. ELECTRICAL CHARACTERISTICS Circuit of , VUVLO < VIN < VOVP AND VIN>VBAT+VSLP, TJ = 0°C – 125°C and TJ = 25°C for typical values (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNITS VUVLO < VIN < VOVP AND VIN > VBAT+VSLP, 15 PWM switching mA IIN Input quiescent current VUVLO < VIN < VOVP AND VIN > VBAT+VSLP, 5 PWM NOT switching 0°C< TJ < 85°C, High-Z Mode 175 μA IBATLEAK Leakage current from BAT to the supply 0°C< TJ < 85°C, VBAT = 4.2V, VIN = 0V 5 μA Battery discharge current in high impedance mode, 0°C< TJ < 85°C, VBAT = 4.2 V, VIN = 0 V or 5 V, High-Z IBAT_HIZ 55 μA (BAT, SW, SYS) mode POWER PATH MANAGEMENT VSYS(REG) VBAT < VMINSYS 3.6 3.7 3.82 V System regulation voltage VBATREG VBATREG VBATREG VSYSREGFETOFF Battery FET turned off, Charge disable or termination +1.5% +3.0% +4.17% VMINSYS Minimum system regulation voltage VBAT < VMINSYS, Input current limit or VINDPM active 3.4 3.5 3.62 V VBAT VBSUP1 Enter supplement mode threshold VBAT > 2.5 V V –30mV VBAT VBSUP2 Exit supplement mode threshold VBAT > 2.5 V V –10mV ILIM(Discharge) Current limit, discharge or supplement mode Current monitored in internal FET only 7 A Measured from Deglitch Time, OUT short circuit during discharge or tDGL(SC1) (VBAT -VSYS) = 300 mV to 250 μs supplement mode VBGATE = (VBAT - 600 mV) Recovery time, OUT short circuit during discharge or tREC(SC1) 60 ms supplement mode Battery range for BGATE operation 2.5 4.5 V BATTERY CHARGER YFF pkg 37 57 Measured from BAT to SYS, RON(BAT-CS+) Internal battery charger MOSFET on-resistance m Ω VBAT = 4.2V RGE pkg 50 70 Battery regulation voltage 3.5 4.44 V VBATREG TA = 25°C –0.5% 0.5% Battery regulation voltage accuracy Over temperature –1% 1% Charge current programmable range VBATSHRT < VBAT < VBATREG 550 2000 mA ICHARGE Fast charge current accuracy 0°C to 125°C –10% 10% VBATSHRT Battery short threshold VBAT Rising, 100 mV Hysteresis 2.9 3.0 3.1 V IBATSHRT Battery short current VBAT < VBATSHRT 50.0 mA tDGL(BATSHRT) Deglitch time for battery short to fast charge transition 32 ms ICHARGE = 50 mA –35% 35% ITERM Termination charge current accuracy ICHARGE > 50 mA –15% 15% Both rising and falling, 2-mV over-drive, tDGL(TERM) Deglitch time for charge termination 32 ms tRISE, tFALL = 100 ns VRCH Recharge threshold voltage Below VBATREG 120 mV tDGL(RCH) Deglitch time VBAT falling below VRCH, tFALL = 100ns 32 ms During battery detection source cycle 3.3 VDETECT Battery detection voltage threshold V During battery detection sink cycle 3.0 4 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Link(s) :bq24272 |
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