MMA25312BT1

1

RF Device Data

Freescale Semiconductor, Inc.

Heterojunction Bipolar Transistor

Technology (InGaP HBT)

High Efficiency/Linearity Amplifier

The MMA25312B is a high efficiency InGaP HBT amplifier designed for

use in 2400 MHz ISM applications, WLAN (802.11g), WiMAX (802.16e) and

wireless broadband mesh networks. It is suitable for applications with

frequencies from 2300 to 2700 MHz using simple external matching

components witha3to5voltsupply.

Features

• Frequency: 2300--2700 MHz

• P1dB: 31 dBm @ 2500 MHz

• Power Gain: 26 dB @ 2500 MHz

• OIP3: 40 dBm @ 2500 MHz

• Active Bias Control (On--chip)

• Single 3 to 5 Volt Supply

• Single--ended Power Detector

• Cost--effective QFN Surface Mount Package

• In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7 inch Reel.

2300--2700 MHz, 26 dB

31 dBm

InGaP HBT

MMA25312BT1

CASE 2131--01

QFN 3×3

PLASTIC

Characteristic

Symbol

2300

MHz

2500

MHz

2700

MHz

Unit

Small--Signal Gain

(S21)

26

26

24.5

dB

Input Return Loss

(S11)

IRL

--14

--12

--12

dB

Output Return Loss

(S22)

ORL

--11

--13

--15

dB

Power Output @

1dB Compression

P1dB

30

31

29.8

dBm

Application Circuit

Table 2. Maximum Ratings

Rating

Symbol

Value

Unit

Supply Voltage

6

V

Supply Current

550

mA

RF Input Power

30

dBm

Storage Temperature Range

--65 to +150

°C

150

°C

2. For reliable operation, the junction temperature should not

exceed 150°C.

Table 3. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

92

°C/W

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

Freescale Semiconductor

Technical Data

Document Number: MMA25312B

Rev. 0, 9/2012

© Freescale Semiconductor, Inc., 2012. All rights reserved.