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PJS50N03 데이터시트(PDF) 1 Page - Pan Jit International Inc. |
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PJS50N03 데이터시트(HTML) 1 Page - Pan Jit International Inc. |
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1 / 6 page ![]() PAGE . 1 March 19,2012-REV.00 PJS50N03 FEATURES • R DS(ON), VGS@10V,ID@3.1A< 57 mΩ • R DS(ON), VGS@4.5V,ID@2.8A< 94 mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC Converters • Low Gate Charge • Lead free in comply with EU RoHS 2002/95/EC directives. • Green molding compound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA • Case: SOT-23 6L Package • Terminals : Solderable per MIL-STD-750,Method 2026 • Apporx. Weight : 0.0003 ounces, 0.0084grams • Marking : N03 30V N-CHANNEL ENHANCEMENT MODE MOSFET MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (T A=25 OC unless otherwise noted ) NOTES: 1. Mounted on 7.5cm 2 FR-4 PCB . PARAM E T E R S YM BOL L IMIT UN IT S D r a i n- S o urc e Vo lta g e V DS 30 V Ga te - S our c e Vo ltage V GS + 20 V C o nti nuo us D rai n C urre nt S teady-S ta te T A =2 5 OCI D 2.9 A P uls ed D rai n C urr ent I DM 16 A P o we r D i s s i pati o n (N o tes 1) S teady-S ta te T A =2 5 OCP D 0.7 W Typi cal Ther ma l Re s i s tanc e (Notes 1 ) R θJA 176 OC/W Operati ng Junc ti on and S torage Te m perature Ra ng e T J,T STG -55 to + 1 5 0 OC VOLTAGE 30 Volts 2.9 Amperes CURRENT |
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