TLF5914

September 1989

MM54C910MM74C910 256 Bit TRI-STATE

Random Access ReadWrite Memory

General Description

The MM54C910MM74C910 is a 64 word by 4-bit random

access memory Inputs consist of six address lines four

data input lines a WE andaME line The six address lines

are internally decoded to select one of the 64 word loca-

tions An internal address register latches the address infor-

mation on the positive to negative transition of ME The

TRI-STATE outputs allow for easy memory expansion

Address Operation

after the positive to negative transition of ME The address

register holds the information and stable address inputs are

not needed at any other time

Write Operation

Data is written into memory at the select-

ed address if WE goes low while ME is low WE must be

returns high

Read Operation

Data is nondestructively read from a

memory location by an address operation with WE held

high

Outputs are in the TRI-STATE (Hi-Z) condition when the

device is writing or disabled

Features

Y

Supply voltage range

30V to 55V

Y

High noise immunity

Y

TTL compatible fan out

1 TTL load

Y

Input address register

Y

Low power consumption

250 nWpackage (typ)

(chip enabled or disabled)

Y

Fast access time

250 ns (typ) at 50V

Y

TRI-STATE outputs

Y

High voltage inputs

Logic Diagrams

TLF5914 – 1

Input Protection

TLF5914 – 2

TRI-STATE

is a registered trademark of National Semiconductor Corporation

C1995 National Semiconductor Corporation

RRD-B30M105Printed in U S A