BYG10D datasheet(2/2 Pages) TAYCHIPST

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RATINGS AND CHARACTERISTIC CURVES

BYG10D THRU BYG10M

Figure 5. Thermal Response

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BYG10D THRU BYG10M

200V-1000V

1.5A

Silicon Mesa SMD Rectifier

120

160

0.01

0.1

100

Tj – Junction Temperature ( °C )

200

94 9180

VR =VRRM

Figure 1. Typ. Reverse Current vs. Junction Temperature

0.4

0.8

1.2

1.6

2.0

Tamb – Ambient Temperature ( °C )

94 9179

120

160

200

125K/W

100K/W

150K/W

RthJA=25K/W

Figure 2. Max. Average Forward Current vs.

Ambient Temperature

0.6

1.2

1.8

2.4

0.01

0.1

100

VF – Forward Voltage ( V )

3.0

94 9284

Tj =25°C

Tj =75°C

Tj = 125°C

Figure 3. Typ. Forward Current vs. Forward Voltage

1000

2000

3000

4000

5000

94 9544

0.2

0.4

0.6

0.8

IF – Forward Current ( A )

1.0

Tamb= 100°C

Tamb= 125°C

Tamb=50°C

IR=0.5A, iR=0.125A

Tamb =25°C

Tamb =75°C

Figure 4. Typ. Reverse Recovery Time vs.

Forward Current

100

1000

tp – Pulse Length ( s )

94 9339

10–5

10–4

10–3

10–2

10–1

100

101

102

tp/T=0.5

tp/T=0.2

tp/T=0.1

tp/T=0.05

tp/T=0.02

tp/T=0.01

Single Pulse

125K/W DC

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