Characteristics

STPS20M60C

2/10

Doc ID 022057 Rev 1

1

Characteristics

When the two diodes 1 and 2 are used simultaneously:

Table 2.

otherwise specified)

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

60

V

40

A

Average forward current,

δ = 0.5

Per diode

Per device

10

20

A

Surge non repetitive forward current

300

A

(1)

1.

For temperature or pulse time duration deratings, please refer to Figure 4 and 5. More details regarding the

avalanche energy measurements and diode validation in the avalanche are provided in the application

notes AN1768 and AN2025.

Repetitive peak avalanche power

13600

W

(2)

2.

See Figure 12

Maximum repetitive peak

avalanche voltage

80

V

VASM

(2)

Maximum single-pulse

peak avalanche voltage

80

V

Storage temperature range

-65 to +175

°C

3.

condition to avoid thermal runaway for a diode on its own heatsink

150

°C

Table 3.

Thermal parameters

Symbol

Parameter

Value

Unit

Junction to case

per diode

1.5

°C/W

total

0.85

Coupling

0.2

°C/W

dPtot

dTj

<

1

Rth(j-a)