IN-PLUG

© Copyright 2005-2007 - ASIC Advantage, Inc. – All rights reserved

- Revision 11 – April 02, 2007

6 / 18

PARAMETER

TEST CONDITIONS

PARAMETERS

UNITS

@ 25°C unless specified

MIN.

TYP.

MAX.

Supply, bias & circuit protection

ICC = 10 mA

9.7

10.0

10.3

V

Shunt regulator dynamic

resistance

1 to 30 mA

2

4

6

Ω

Shunt regulator peak

--

50

mA

-

100

150

μΑ

V

operation

4A, 600V, 20 nC

MOSFET , L= 7 mH

-3

-

mA

Thermal shutdown trip

temperature

-

150

-

°C

Multiplier

Maximum operating voltage

across IS resistor (R9)

See note2

-1.3

-1.2

-1.1

V

COMP voltage range

0

-

3

V

Vline input current operating

range

Temp = 0 to 70°C

20

-

600

μA

Bypass capacitor (pin8)

-

1

-

μF

Error amplifier

Reference voltage

ICC = 10 mA

0.48

0.50

0.52

V

Open loop gain

-

85

-

dB

3 dB response

-

200

-

Hz

Output impedance

-

30

-

K

Ω

P & N Outputs to MOSFET gate

P gate driver saturation

10 mA (source)

-

0.3

0.5

V

N gate driver saturation

10 mA (sink)

-

0.2

0.35

V

Gate pull-down resistor

(internal)

30

45

65

K

Ω

PDRIVE Rise time (10% to

90%)

390 pF load

-

100

200

ns

NDRIVE Fall time (10% to

90%)

390 pF load

-

50

100

ns

Max recommended total

external MOSFET charge

--

50

nC

Note1:

Electrical parameters, although guaranteed, are not all 100% tested in production.

Note2:

To avoid damage to pin 2 by the in-rush current, size R2 to limit the input current into the IC to 30mA.

1Kohm to 33Kohm are suitable values for most applications.