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SST48CF032 데이터시트(PDF) 16 Page - Silicon Storage Technology, Inc |
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SST48CF032 데이터시트(HTML) 16 Page - Silicon Storage Technology, Inc |
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16 / 60 page ![]() 16 Data Sheet CompactFlash Card SST48CF008 / 016 / 024 / 032 / 048 / 064 / 096 / 128 / 192 / 256 ©2001 Silicon Storage Technology, Inc. S71125-03-000 9/01 375 2.3.7 Configuration Register (Attribute Memory) Write Timing specification The Card Configuration write access time is defined as 100 ns. Detailed timing specifications are shown in Table 2-4. FIGURE 2-2: CONFIGURATION REGISTER (ATTRIBUTE MEMORY) WRITE TIMING DIAGRAM TABLE 2-4: CONFIGURATION REGISTER (ATTRIBUTE MEMORY) WRITE TIMING Speed Version 100 ns Item Symbol IEEE Symbol Min1 1. All times are in nanoseconds. DIN signifies data provided by the system to the CompactFlash card. All AC specifications are guaranteed by design. Max1 Write Cycle Time tc(W) tAVAV 100 Write Pulse Width tw(WE) tWLWH 60 Address Setup Time tsu(A) tAVWL 10 Write Recovery Time trec(WE) tWMAX 15 Data Setup Time for WE tsu(D-WEH) tDVWH 40 Data Hold Time th(D) tWMDX 15 T2-4.1 375 375 ILL2-2.0 -Reg Din Valid tsu(D-WEH) tw(WE) tsu(A) trec(WE) tc(W) th(D) An -WE -CE -OE Din |
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